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At Plasmionique, we continuously develop novel systems and processes to meet the evolving needs of our clients. Explore our technologies to discover how we can help transform your ideas into reality.
Plasmionique’s PVD systems are highly versatile semi-automated or fully automated customized systems integrating a variety of Physical Vapour Deposition (PVD) technologies. All systems are controlled by our PLASMICON proprietary control system.
Our PVD Thermal Evaporation (TE) product allows for the evaporation of metals, dielectrics and organic materials using E-beams, Evaporation boats and Effusion cells for application to thin film deposition and epitaxial growth of materials. Large or Table Top units with full computer-controlled features allow thickness control with high precision. Glovebox integration also available.
For further information, please visit our EVAD Series product page.
Plasmionique’s PVD systems are highly versatile semi-automated or fully automated customized systems integrating a variety of Physical Vapour Deposition (PVD) technologies. All systems are controlled by our PLASMICON proprietary control system.
Our PVD Pulsed Laser Deposition (PLD) systems are designed for advanced thin film coating applications. Advantages of PLD are its simplicity and ability to preserve the often-complex stoichiometry of the target material in the deposited film.
Plasmionique’s PVD systems are highly versatile semi-automated or fully automated customized systems integrating a variety of Physical Vapour Deposition (PVD) technologies. All systems are controlled by our PLASMICON proprietary control system.
Our PVD Magnetron Sputtering (MS) systems are turn-key units customized to fit the end users’ requirements. They are highly versatile with fully integrated control and data acquisition systems.
Plasmionique’s proprietary PVD Magnetron Sputtering cathodes are designed for high target utilization efficiency and are available in balanced and unbalanced magnetic configurations in circular or rectangular shapes. The magnetron cathodes can operate in DC, pulse-DC, AC or Radio Frequency (RF) biasing modes.
For further information, please visit our MAGNION Series product page and our Magnetron Source component page.
Plasmionique offers various plasma reactors for cleaning and etching. Processes are carried out using DC, HF, RF or microwave generated plasma, in atmospheric or low-pressure regimes.
The difference between plasma etching and PECVD, in principle, is only the plasma chemistry. In the etching process, the chemical reaction with a substrate results in volatile molecules that are pumped away, whereas in PECVD the reactions between plasma radicals leave a solid by-product on the surfaces that they encounter.
For further information, please visit our FLARION Series product page.
Plasma-Based Ion Implanters (PBII) are an economical and versatile substitute for surface engineering applications, as well as shallow depth doping for nanoelectronics and photonics applications. The plasma-immersed ion implantation process is a conformal surface treatment and allows deposition on structures having 3D topography.
Plasmionique’s PBII systems, can operate either with a Continuous Working (CW) plasma and a pulsed substrate bias voltage or with constant bias and a pulsed plasma. The pulsed plasma option is particularly useful when mono-energetic ion implantation is critical.
For further information, please visit our PBII Series product page.
Chemical Vapour Deposition (CVD) is a process where the chemical reactions of gaseous radicals form solid molecules which are deposited on a surface. CVD-based processes are conformal coating processes and allow deposition on structures having 3D topography.
CVD-based reactors are configured as “Hot Wall” or “Cold Wall” reactors. Controlling the wall temperature allows for the prevention or minimization of vapour condensation on reactor walls. The substrate or the workpiece holders are heated to sufficiently high temperatures, in order to optimize the molecular disintegration of gases and vapours and the reactive formation of solid coatings.
The advantages of the plasma are that it reduces the required temperature of the surface and modulation of the plasma density can be used as a tool to change the structure of the deposited film. For more information, please see PECVD applications.
For further information, please visit our FLARION Series product page.
In Plasma-Enhanced CVD (PECVD), a plasma contributes to the production of radicals from gas (or vapour) precursors which react to form the solid molecules that are deposited on a (typically) heated surface. The advantages of the plasma are that it reduces the required temperature of the surface and modulation of the plasma density can be used as a tool to change the structure of the deposited film.
PECVD-based reactors are configured as “Hot Wall” or “Cold Wall” reactors. Controlling the wall temperature allows for the prevention or minimization of vapour condensation on reactor walls. The substrate or the workpiece holders are heated to sufficiently high temperatures, in order to optimize the molecular disintegration of gases and vapours and the reactive formation of solid coatings.
For further information, please visit our FLARION Series and MIRENIQUE Series product pages.
Atomic Layer Deposition (ALD) is essentially a pulsed CVD process in which the reaction typically takes place as a result of two subsequent pulses of two reactive precursors and gases or vapors. This allows for mono-layer control accuracy.
In Plasma-Enhanced Atomic Layer Deposition (PEALD), using plasma in the reaction reduces the temperature of the process. Specific gases can be used to get the desired results from the deposition process.
