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Plasmionique’s Inductively Coupled Plasma (ICP) and Ion sources are highly versatile units that could be adapted to a variety of applications. These sources could be configured for operation as remote or immersed plasma.
Immersed plasma sources are typically used for Dry Etching, namely Reactive-Ion Etching (RIE), or Plasma Enhanced CVD (PECVD). They are also used for applications like Plasma Polymerization, as an example. The ICP sources, operating with RF generators, have their antenna outside the plasma chamber, thus have the advantage of being an electrodeless plasma source, eliminating or minimizing the possibility of introducing impurities in processing plasma.
Remote ICP sources are typically used for Plasma Assisted ALD, Enhanced Reactive Sputter Deposition, Remote Plasma Cleaning, Surface Functionalization, etc. Remote ICP sources could also be configured as Ion or Neutral Atom Beam sources.
For Ion Beam and Neutral Atom Beam source applications a beam extraction module is also integrated with each source. Ion Beam current densities up to 6 mA/cm2 could be achieved with Plasmionique’s ICP Ion Beam sources.
Application examples for Ion beam sources include, surface cleaning, Ion beam etching, ion beam assisted deposition (IBAD) and Ion beam sputter deposition.
The Gridless Ion Sources are of type End-Hall Ion Source with a unique design option, allowing operating without filament at energies above 450 eV.
End-Hall ion sources provide a versatile broad ion beam in the low energy and high current (typical energy is in the 30-500 eV range and beam current is in the 1 A range). This ion source operates at pressures below 1 mTorr, which makes it an ideal choice for sample cleaning and surface activation. This ion source is frequently used, in tandem with an evaporator, in the Ion Assisted Deposition (IAD) applications. End-Hall ion sources are also used Ion Beam Sputtering (IBS), Dual Ion Beam Sputtering (DIBS) and many other surface processing applications.