- CVD / ALD / PECVD / RIE Systems
Table Top
Plasmionique’s Table Top CVD / ALD / PECVD / RIE Systems are versatile plasma processing…
Plasmionique offers various plasma reactors for cleaning, etching, Plasma-Enhanced Chemical Vapour Deposition (PECVD) and synthesis of nanostructured materials. Processed are carried out using DC, HF, RF or microwave generated plasma, in atmospheric or low-pressure regimes.
Our CVD / ALD / PECVD / RIE Systems are offered in Capacitively Coupled Plasma (CCP) or Inductively Coupled Plasma (ICP) configurations. Etching or PECVD processes are carried out using gases or precursors having chemically reactive radicals.
Capacitively Coupled Plasmas (CCP) in etching reactors are generated between two parallel electrodes. CCP reactors are the most common plasma systems used in dry etching. The power is applied to the lower (Reactive Ion Etching, RIE) or the upper electrode (Plasma Etching, PE). Typical reactors use 13.56 MHz RF power. The lower electrode is the substrate holder, and the top electrode forms the gas showerhead.
Inductively Coupled Plasmas (ICP) are generated by coupling the RF field of a coil-shaped antenna to the plasma through a dielectric. The most common reactors have a flat, pancake-style antenna, with the antenna in atmosphere, with the dielectric being either quartz or alumina.
In ICP reactors, the substrate holder is often biased, allowing independent control of plasma density and the energy of ions bombarding the substrate. This feature is required for Deep Reactive Ion Etching (DRIE).
Alternatively, our CVD / ALD Systems are offered in the following options:
Metal-Organic CVD (MOCVD) reactors use Metalorganic precursors as the main reactive source in the CVD process.
Atomic Layer Deposition (ALD) is essentially a pulsed CVD process in which the reaction typically takes place as result of two subsequent pulses of two reactive precursors and gases or vapors. This allows for mono-layer control accuracy.
Horizontal CVD furnaces have the option to operate with single or multiple heating zones. Combined with Gas, Vapour and Liquid Process Control systems, these systems offer unparalleled flexibility. Provisions to tilt the furnace for loading and unloading the powder can also be integrated.
This product can be integrated in the following system formats:
Plasmionique’s Table Top CVD / ALD / PECVD / RIE Systems are versatile plasma processing…
Plasmionique’s Compact CVD / ALD / PECVD / RIE Systems seamlessly blend the efficiency of…
Plasmionique’s Full Size CVD / ALD / PECVD / RIE Systems are designed for unparalleled…
Plasmionique’s horizontal CVD / PECVD furnaces have the option to operate with single or multiple…
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